Analysis of the anisotropy in an m-plane GaN film via HVPE on a-LiAlO2 substrate

A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy (HVPE) on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photoluminescence (PL) measurements were carried out. The results show that the electronic transition was influenced by the electric field along the c-axis, which results in an obvious anisotropy, but the influence was weakened by the hexagonal symmetry along the c-axis.