Power semiconductor device and DMOS - power semiconductor component

Power semiconductor component with a logic transistor region (I) and a power transistor region (II), which are formed in a common semiconductor substrate (1), wherein at least partially on the surface of the semiconductor substrate (1) an insulating support layer is formed (4), on which a first conductive line layer is formed (5) at least in the logic transistor region (I) has recesses (L); is formed an insulating filling layer (6) on the first conductive line layer (5) and on the insulating support layer (4), which fills the gaps (L); is formed a SiON layer (7) on the insulating filling layer (6); and a second conductive line layer (9) on the SiON layer (7) is formed.