InGaAsP/InP laser diodes emitting at 1300 nm for optical communications

The fabrication process of InGaAsP/InP buried heterostructure laser diode modules emitting at 1300 nm is described. Results on testing these modules in a real fiber optic communication are presented as well. It was demonstrated that heterostructure laser diodes produced by a combination of chemical and melt-etching and liquid phase epitaxy have high performance characteristics. These laser diodes were used to fabricate fiber optic pigtailed modules. The operation of these modules in a real fiber optic communication system was compared with the operation of standard emitters and considerable increasing of system parameters. At the module mean operating current of 25 mA and transmission rate of 41.2 Mbit/s for a 25 km transmission line the bit error rate (BER) of 10/sup -11/ was measured.