Observations on subband electron properties in In 0.65 Ga 0.35 As/In 0.52 Al 0.48 As MM-HEMT with Si δ -doped on the barriers

Magneto-transport measurements have been carried out on a Si δ -doped In 0.65 Ga 0.35 As/In 0.52 Al 0.48 As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60K under magnetic field up to 13T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In 0.65 Ga 0.35 As/In 0.52 Al 0.48 As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrdinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the δ -doped electrons transfer into the quantum well in the temperature range between 1.5 and 60K.