The Optimal Design of Field Ring for Reliability and Realization of 3.3 kV Insulated-Gate Bipolar Transistor Power Semiconductor

: This research was about field ring for 3.3 kV planar gate power IGBT. Therefore, we designed optimal field ring for 3.3 kV power IGBT and we analyzed the electrical characteristics of 3.3 kV planar gate power IGBT according to parameters of field ring. Based on this background, we obtained 3.3 kV high breakdown voltage and 2.9 V on state voltage drop for 3.3 kV planar gate power IGBT. To obtain high breakdown voltage, we confirm that the counts of field ring were 23. And we obtained optimal parameters. The gap distance between field rings to field ring was 13 μm and the width of field ring was 5 μm. This design technology will be adapt field stop IGBT and super junction IGBT. Thyristor device for power conversion switch will be replaced to super high voltage power IGBT.