Stability of SIMOX and SIMNI structures at high temperature in hydrogen

Abstract SIMOX and SIMNI samples formed by ion beam synthesis with different implantation doses were heated at 1000–1200°C in a hydrogen atmosphere for different times. After heating, the top crystal silicon layers of the SIMOX samples become more damaged and highly resistive. A high density of dislocations and defects appeared on the surface and the buried insulator was partly dissolved. The stability of SIMNI structures is related to the implantation dose. The top layer of lower-dose SIMNI samples was rolled or even completely peeled off after heating for 30 min at 1200°C in H 2 , but the SIMNI structure with a 1.9 × 10 18 /cm 2 dose remained stable under the same heating conditions.