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43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
2010
Piotrowicz
Ouarch
Chartier
Aubry
Callet
Floriot
Jacquet
Jardel
Morvan
Reveyrand
Sarazin
Delage
Keywords:
algan gan
Amplifier
Epitaxy
High-electron-mobility transistor
Monolithic microwave integrated circuit
Gallium nitride
X band
Optoelectronics
mmic amplifiers
Materials science
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