Split biased radio frequency power amplifier with enhanced linearity

A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. A first power cell may be coupled with the first transistor, and a second power cell may be coupled with the second transistor. In embodiments, the first transistor may be scaled to operate at a first current density, while the second transistor may be scaled to operate at a second current density.