Numerical study on passive crossbar arrays employing threshold switches as cell-selection-devices

A read-out voltage margin of crossbar-array-based passive non-volatile memory employing one threshold switch and one memory switch (resistor) (1TS1R) unit structure was numerically evaluated for the worst-case pattern with respect to the row and column number of a crossbar array. The threshold switching behavior of amorphous GeSe, which has been recently reported by Jeong et al., was taken for the evaluation of the 1TS1R crossbar array. The calculation results identified that a pull-up voltage is of importance because of the highly nonlinear current-voltage behavior of amorphous GeSe in the high resistance state.