Crystalline silicon and manufacture method therefor

The present invention discloses a crystalline silicon of which materials comprise silicon, gallium and element X, wherein the concentration of the element X is 1010-1016 atoms/cubic centimeter. The conversion efficiency of a solar cell manufactured via use of the said crystalline silicon is greater than 20%. The invention also provides a crystalline silicon and manufacture method. According to the crystalline silicon disclosed in the invention, an element boron in a conventional P type crystalline silicon is replaced with an element gallium, a boron and oxygen complex can be prevented from being generated, and light degradation effects can be lowered. Via down-conversion effects, the element X which is doped can effectively improve the utilization rate of ultraviolet wave band light used by silicon materials, and the conversion efficiency of the solar cell manufactured via the crystalline silicon is improved substantially.