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Surface Segregation and Dopant Compensation in Si δ-doped InSb and Al_xIn_1-xSb Grown by Molecular Beam Epitaxy
Surface Segregation and Dopant Compensation in Si δ-doped InSb and Al_xIn_1-xSb Grown by Molecular Beam Epitaxy
1998
W K Liu
K. J. Goldammer
M. B. Santos
Keywords:
Molecular beam epitaxy
Dopant
Doping
Materials science
Analytical chemistry
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