Influence of crystal orientation and body doping on trigate transistor performance

This work characterizes long channel trigate transistors with respect to the systematic influence of crystal orientation and body doping on performance issues like mobility and V th adjustment. A fin orientation of (100) is found favourable for n-channel, (110) for p-channel transistors. Experiment shows that body doping is suitable to taylor V th , but low doping levels are preferable to reduce V th variations. The applicability of these long channel results to short-channel transistors down to 20 nm gate length is demonstrated and good performance is obtained.