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Acemap > Paper > Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack

Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack

2020 
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