Crystallization kinetics and phase transformation studies on glassy Se85In15-xSbx system

Abstract Our aim in the present research work is to investigate the crystallization kinetics and phase transformation studies in Se 85 In 15-x Sb x semiconductor. DSC measurements were done at constant heating rates of 5, 10, 15, 20 and 25 K/min for Se 85 In 15-x Sb x alloys. The glass transition (T g ), on-set crystallization (T c ) and peak crystallization (T p ) temperature were found to be increases with heating rate for all samples. The activation energy for glass transition (ΔE g ) and crystallization (ΔE c ) were calculated by different approaches and found to be nearly identical. Thin films of Se 85 In 15-x Sb x alloys were prepared by the thermal evaporation technique and the effect of thermal annealing on optical properties were discussed by means of optical absorption measurements. The optical band gaps were found to decrease with annealing temperature. This decrease in optical band gap can be associated with phase change in Se 85 In 15-x Sb x alloys from amorphous to crystalline phase.