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Acemap > Paper > Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm T

Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm T

2007 
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