Setup for in situ x-ray diffraction and ion-channeling studies of ion-implantation effects in thin films

A novel setup is introduced that combines energy-dispersive x-ray diffraction and ion-channeling capabilities for damage studies on single-crystalline thin films irradiated with 100–720 keV heavy ions. Channeling measurements using 2 MeV He ions provide depth-resolved information on the damage buildup. The x-ray diffraction tool is used to measure damage-related lattice strain, and can provide information on bombardment-induced disorder complementary to the channeling technique. Data obtained during the implantation of 360 keV Ar2+ ions into a zirconia thin film illustrate the potential of the instrument.