Self-actuation tests of ohmic contact and capacitive RFMEMS switches for wideband RF power limiter circuits

This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29–37 dBm of RF input power (P in ) given a DC bias (V bias ) of 42–47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at P in = 24–31 dBm with V bias = 0–19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits.