A mmWave Switch Using Novel Back-End-Of-Line (BEOL) in 22nm FinFET Technology

This paper presents a mmWave switch designed using novel back-end-of-line (BEOL) in Intel 22nm FinFET (22FFL) technology. In the newly developed mmWave BEOL, ExpressVia is introduced, which allows direct transistor connection to thick metal layer. Continuous via and 3+1 thick metal layers are also enabled to provide design flexibility. Taking advantage of the new features, an ultra-wideband (DC-60GHz) series SPST switch is implemented in this technology achieving 1.9dB insertion loss, 21.0dB isolation, 17.3dB return loss, 24.1dBm IP1dB, 35.9dBm IIP3 at 28GHz within an active area of 0.00176mm2. Reliability measurements show the switch can handle up to 24.9dBm of power at 28GHz. The measured ${\mathrm{R}_{\text{on}}}^{\ast}\mathrm{C}_{\text{off}}$ at top metal is 107fs, which is well suited for emerging 5G applications.