Large positive magnetoresistance of graphene at room temperature in magnetic fields up to 0.5 T

Abstract Graphene films were grown on an iron film catalyst deposited on oxidized silicon substrate, using the low-pressure chemical vapor deposition. Subsequently the iron film was dissolved with an aqueous solution of iron nitrate. The structures consisting of quasi-suspended graphene on reaction products of an iron film with iron nitrate were obtained. Magnetoresistance properties of the structures were investigated at a room temperature, and the positive magnetoresistance was observed. The maximum magnetoresistance value was 100% in the magnetic field of 0.5 T. The dependence of magnetoresistance on the magnetic field was quasi-linear in the range of 0.07–0.5 T.