In Situ Reaction Mechanism Studies on Ozone-Based Atomic Layer Deposition of Al2O3 and HfO2
2010
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al2O3 and HfO2 thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor. In addition to released CH4 and CO2, water was detected as one of the reaction byproduct in the TMA/O3 process. In the TEMAH/O3 process, the surface after the ozone pulse consisted of chemisorpted active oxygen and −OH groups, leading to the release of H2O, CO2, and HNEtMe during the metal precursor pulse.
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