Primary defects in low‐fluence ion‐implanted silicon

Electrical defect energy levels created by low‐fluence ionic impact were investigated using transient capacitance spectroscopy. The ion species used are 1H+, 2H+2, 4He+, 11B+, and 31P+. The defect levels were identified by comparing these levels with those obtained in electron‐irradiated structures. The defect production yields for various ion species and for different fluences were obtained. Only a small fraction of the carrier removal could be accounted for by the observed DLTS levels.