Deposition of carbon-free silicon dioxide from pure hexamethyldisiloxane using an atmospheric microplasma jet

Carbon-free silicon dioxide has been deposited at room temperature by injection of pure hexamethyldisiloxane (HMDSO) into an atmospheric pressure microplasma jet from argon. At low HMDSO flow rates [ 0.1SCCM), SiOxCyHz films with a carbon content of up to 21% are obtained. The transition between organic to inorganic film is confirmed by Fourier transformed infrared spectroscopy. The deposition of inorganic films without oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO.