InGaAlP Zn-diffused window structure laser diodes fabricated by using highly Zn-doped GaAs layers

Minoru Watanabe,Y Ito,W. Shiozawa,Makoto Okada,Osamu Horiuchi,Akira Tanaka,Koichi Gen-ei,Hajime Okuda,Kazuo Fukuoka

InGaAlP Zn-diffused window structure laser diodes fabricated by using highly Zn-doped GaAs layers

1998

Minoru Watanabe
Y Ito
W. Shiozawa
Makoto Okada
Osamu Horiuchi
Akira Tanaka
Koichi Gen-ei
Hajime Okuda
Kazuo Fukuoka

685 nm InGaAlP window structure laser diodes have been obtained with a new Zn diffusion method utilizing highly Zn-doped GaAs layers as a Zn source. The method has some advantages and superior controllability.

Keywords:

Vertical-cavity surface-emitting laser
Optics
Physics
Laser diode
Metalorganic vapour phase epitaxy
Optoelectronics
Laser
Doping
Semiconductor laser theory
Diode
ridge waveguides
zn doped
Controllability

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