Organic Field Effect Transistor Based on P3HT with Two Different Gate Dielectrics

The electrical performance of bottom-gate/top source-drain contact for p-channel organic field-effect transistors (OFETs) using poly(3-hexylthiophene) (P3HT) as an active semiconductor layer with two different gate dielectric materials, Polyvinylpyrrolidone (PVP) and Hafnium oxide (HfO2), is investigated in this work. The output and transfer characteristics were studied for HfO2, PVP and HfO2/PVP as organic gate insulator layer. Both characteristics show a high drain current at the gate dielectric HfO2/PVP equal to -0.0031A and -0.0015A for output and transfer characteristics respectively, this can be attributed to the increasing of the dielectric capacitance. Transcondactance characteristics also studied for the three organic materials and show the HfO2/PVP gate dielectric have higher value from the single layers which indicate the effect of dielectric capacitance, gm=-0.5517x10-4A/V, -0.9931x10-5A/V, and -0.6511 x10-4A/V respectively