FinFET, manufacturing method of the FinFET and electronic device comprising the FinFET

The invention discloses a fin field effect transistor (FinFET), a manufacturing method of the FinFET and an electronic device comprising the FinFET. According to the embodiment, the FinFET may comprise fins formed on a substrate; gate stacks which are formed on the substrate and are intersected with the fins; and gate side walls formed on the side walls of the gate stacks, wherein the gate side walls comprise a dielectric material and a negative capacitance material.