Speed properties of a semiconductor-discharge gap IR image converter studied with a streak camera system
1993
Under certain experimental conditions a semiconductor‐discharge gap structure can be used as detector for spatiotemporal resolved measurements on IR radiation. With a streak camera system and a semiconductor laser diode (λ=1.3 μm), we investigate experimentally the speed properties of this kind of converter. The experimental results are compared with the predictions of a simple theoretical model.
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