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Acemap > Paper > Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

2018 
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