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Voltage pulse stress effect on gate stack TDDB distributions at nanometric scale: Consequence on aging by ESD
Voltage pulse stress effect on gate stack TDDB distributions at nanometric scale: Consequence on aging by ESD
2014
R. Foissac
S. Blonkowski
M. Gros-Jean
M. Kogelschatz
Keywords:
Electronic engineering
Time-dependent gate oxide breakdown
Breakdown voltage
Engineering
Voltage
Analytical chemistry
Pulse (signal processing)
voltage pulse
gate stack
stress effects
Correction
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