Optical Direct Write of Dolan-Bridge Junctions for Transmon Qubits

We characterize highly coherent transmon qubits fabricated with a direct-write photolithography system. Multi-layer evaporation and oxidation allows us to tune the Josephson energy by reducing the effective tunneling area and increasing the barrier thickness. Surface treatments before resist application and again before evaporation reduce the occurrence of strongly-coupled two-level system fluctuators, resulting in high coherence devices. With optimized surface treatments we achieve energy relaxation $T_1$ times in excess of 80 $\mu$s for three dimensional transmon qubits with Josephson junction lithographic areas of 2 $\mu\mathrm{m}^2$.