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AlGaN/GaN MIS-HEMTs with In Situ SiN x as Gate Dielectric and Passivation Layer
AlGaN/GaN MIS-HEMTs with In Situ SiN x as Gate Dielectric and Passivation Layer
2019
Chen Jingxiong
Zhou Quanbin
Liu Xiaoyi
Wang Hong
Keywords:
Chemical substance
In situ
Optoelectronics
Passivation
Gate dielectric
Science, technology and society
Materials science
algan gan
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