A method for manufacturing a FinFET and finfetstruktur with improved gate-planarity
2012
It is disclosed having improved gate planarity and a manufacturing method of a FinFET. The gate zone is arranged on a structure of fins prior to removing any undesirable fins. It can be applied both to remove the unwanted fins lithographic techniques or etching techniques or a combination. All or some of the remaining fins can be combined.
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