Electron mobility and deep level trap profiles of MBE GaAs on Si MESFETs

Low field electron mobility and deep trap profiles have been determined for 0•7 μm gate length GaAs on Si MESFETs. The peak mobility at 300 K is 3600 cm 2 /V s, and the dominant trap has been identified as EL2 (E a 0•83 eV), with a concentration of 2-6×10 14 cm −3 . The comparison of these profiles with those of GaAs/GaAs MESFETs has been used to assess the electrical effects of growth on a silicon substrate