Interfacial Defects Related to the Substrate. Treatment in Molecular Beam Epitaxial Silicon.

Interfacial defects related to the residual carbon on the hydrogenterminated Si(100) surface have been studied using the deep-level transient spectroscopy (DLTS) technique. The defect level is found to be donorlike which compensates the acceptor impurity at the interface. With a fast load-in and a two-step annealing, the defect density can be suppressed below the DLTS detection limit of 10 12 cm -3