Oxygen diffusion in GdBa2 Cu3O(6+y) thin films

The oxygenation process of the GdBa2 Cu3O(6+y) thin films was investigated by resistivity measurements in the temperature interval 650–1050 K and oxygen pressure 1 mbar. An iteration procedure is proposed for calculating the diffusion relaxation times from the curves of resistance decay with time. All samples showed a linear Arrhenius plot with an activation energy E0 close to 1.5 eV. The diffusion resulted concentration independent for y≈0.4–0.9.