Nondestructive diagnostics of nanoheterostructures with InGaN/GaN multiple quantum wells by thermal admittance spectroscopy

On the basis of the designed complex of low-temperature admittance spectroscopy, the electron spectrum of semiconductor light emitting diode (LED) heterostructures with InGaN/GaN multiple quantum wells was investigated. The features of the construction of the measuring complex, as well as the technique of measurements of semiconductor nanoheterostructures and processing of admittance spectra, are presented.