Development of a magnetic tunnel transistor based on a double tunnel junction

We report on the latest development of a new type of magnetic tunnel transistor (MTT) using a ferromagnetic base layer and two magnetic tunnel junctions (MTJ). The principle of the device is based on the transport of a spin-polarized hot electron current which can be manipulated under an appropriate voltage biasing scheme using three terminals. The first MTJ is used as an emitter of hot electrons into the base. The second MTJ and the base play the role of a spin-dependent filter. Transport measurements have been carried out, showing the creation of hot electrons and a collected magnetocurrent (MC) signal.