Deformation potentials of the Γ(000) band extrema in CdGa2S4

For the ternary compound CdGa2S4 the values of the contributions to the temperature coefficient of the absorption edge due to lattice dilatation (dE/dT)L and the electron-phonon interaction (dE/dT)eph are found. The deformation potentials of the bottom of the conduction band (12.3 eV) and top of the valence band (−10.9 eV) are calculated.