Hot photoexcited electrons: Time evolution of the electron temperature in high magnetic fields. Application to InSb

Abstract We study the time evolution of the temperature of electrons photoexcited by a laser pulse in the conduction band of a semiconductor in extreme quantum limit conditions. We analyze the influence of several parameters such as magnetic field, photoexcitation intensity, photoexcitation energy, recombination time, lattice temperature and we discuss the role of the various types of electron-phonon scattering mechanisms in the particular case of InSb.