Method for manufacturing phase-change semiconductor device and phase-change semiconductor device

The invention relates to a method for manufacturing a phase-change semiconductor device and the phase-change semiconductor device. The method for manufacturing the phase-change semiconductor device comprises the following steps: providing a substrate, wherein the substrate is provided with a groove; and the bottom of the groove is provided with a first electrode layer; forming a conductive first bonding layer in the groove, which is conducted with the first electrode layer; filling a solid-state phase-change material in the groove; forming a dielectric layer with a through hole on the substrate, wherein the solid-state phase-change material filled in the groove is exposed from the through hole; and filling the solid-state phase-change material in the through hole of the dielectric layer. Compared with the prior art, the method comprises the advantages that: the conductive first bonding layer is arranged between the first electrode layer and the solid-state phase-change material of the phase-change semiconductor device, and is used for connecting a first electrode and the solid-state phase-change material, so that the solid-state phase-change material and the first electrode layer can be tightly bonded, the solid-state phase-change material cannot peel off, and the phase-change semiconductor device can keep a lower working voltage.