High-Frequency Tellurene MOSFETs with Biased Contacts

Microwave performance of MOSFETs with a tellurene channel is reported for the first time. The measured forward current-gain cutoff frequency and the maximum frequency of oscillation are 1.4 GHz and 3.6 GHz, respectively. Overcoming the challenge for contacting 2D materials, source contact bias is shown to increase the drain current three times and the peak transconductance four times. Additionally, tellurene being stable in air, the MOSFETs are stable for months even without surface passivation. This suggests that tellurene is a viable candidate channel material for thin-film transistors capable of operation at microwave frequencies.