Extended (180 V) voltage in 0.6 /spl mu/m thin-layer-SOI A-BCD3 technology on 1 /spl mu/m BOX for display, automotive and consumer applications

In this paper the extension to 180 V of a compact 0.6 /spl mu/m Silicon-on-Insulator BCD-technology on 1 /spl mu/m Buried Oxide is discussed. DMOS performance (n- and p-type) at 180 V has been simulated after calibration on 120 V devices and first experimental results are given. Also the feasibility of milli-Ohm power devices in three level power metal without Cu plating is demonstrated.