Localized melting induced by rapid annealing correlated with the space distribution of A type microdefects in silicon Czochralski-grown wafers

It is shown that when a standard polished single-crystalline silicon wafer is heated uniformly by light pulses from a xenon flashlamp, anisotropic melting at localized places is caused by nucleation in the bulk and the melting nuclei are A-type microdefects.