Silicon coatings on copper by chemical vapor deposition in fluidized bed reactors

Abstract A coating technique based on (a) chemical vapor deposition, (b) fluidized bed technology and (c) subhalide chemistry was used to siliconize copper. Copper samples were siliconized in silicon beds kept at temperatures in the range 350–550 °C. Alternating current (a.c.) impedance measurements indicate that the corrosion resistance of the coated samples is significantly better than that of uncoated copper.