InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy

Abstract A new InP/InGaAs/InP DHBT structure with high carbon (C)-doped base was optimized and grown successfully by gas source molecular beam epitaxy (GSMBE) in this work. The C-doping concentration is 3×10 19  cm −3 with carrier mobility of 66.3 cm 2 /V s. Characteristics of C-doped InGaAs materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100×100 μm 2 was fabricated. The open base breakdown voltage (VB CEO ) of 4.2 V and current gain of 60 at V CE of 3.0 V were achieved. All these results prove the material is suitable for DHBT device fabrication.