A method of forming a replacement metal gate borderless contact

A method for forming a replacement metal gate (701), comprising: Forming a dummy gate (102) on a top surface of a substrate (101) and a first set of spacers (103) adjacent side walls of the dummy gate; Reducing a height of the first set of spacers to create so that from the first set of spacer elements a second set of spacer elements with a reduced height (203) and expose an upper portion of the side walls of the dummy gate; Depositing an etch stop layer (301), the spacer elements with the reduced level and the exposed upper portion of the side walls of the dummy gate covered; Depositing a first dielectric interlevel layer (401) covering the spacer elements with the reduced height and at least a portion of the exposed upper portion of the side walls of the dummy gate; and Lowering an upper surface of the first inter-level layer by planarization to a plane (501) above the spacer elements with the reduced height and within a range of the upper portion of the side walls, whereby said etch stop layer from a top surface of the dummy gate is removed and a hole in the etch stop layer is created to expose the dummy gate from a top side thereof; and Remove an existing gate material of the dummy gate from the opening and replacing it with a new gate material to form a replacement metal gate (701).