A 90 V breakdown high temperature SOI lateral power nMOSFET

A high-temperature lateral power MOS field-effect transistor on silicon-on-insulator (SOI) material has been demonstrated to operate up to at least 300/spl deg/C. This device is targeted initially for high-temperature applications such as engine control and down-hole oil exploration. This power device is easily integrable in our standard digital process now, enabling high temperature, mixed-signal technology. Prototype solenoid drivers and torque motor drivers have been demonstrated using this technology.