Self-rectification RRAM based on TaOx and preparation method of RRAM

The invention relates to a self-rectification RRAM (Resistive Random Access Memory) based on TaOx and a preparation method of the RRAM. The preparation method comprises the steps that 1) a bottom electrode is prepared at a substrate, and a bottom electrode graph is formed through photoengraving; 2) n /p heavy doping is conducted on a bottom electrode graph area to form the bottom electrode; 3) a TaOx film is prepared on the bottom electrode, and a material of a top electrode is selected according to the doping type of the bottom electrode and the range of a TaOx impurity energy level; and 4) the top electrode is sputtered and patterned on an oxide film; the preparation is completed; and the RRAM that the patterned substrate part is the bottom electrode formed by n /p heavy doping treatment, and a schottky contact surface and an ohmic contact surface are arranged on a resistive random film between the top electrode and the bottom electrode is obtained. According to the self-rectification RRAM and the preparation method, the RRAM bottom electrode based on TaOx is prepared by adopting heavily doped Si, the top electrode is selected reasonably, and an appropriate operation method is adopted, so that the self-rectification memory that is suitable for superintegration and is fully compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) technology is achieved.