Heterojunction field effect transistor laser

Yoshihiro Suzuki,Hiroyoshi Yajima,Kenji Shimoyama,Yuichi Inoue,Masanori Katoh,Hideki Gotoh

Heterojunction field effect transistor laser

1990

Yoshihiro Suzuki
Hiroyoshi Yajima
Kenji Shimoyama
Yuichi Inoue
Masanori Katoh
Hideki Gotoh

A successful demonstration of a heterojunction field effect transistor laser is described. A typical threshold current of 45 mA in a laser mode and a transconductance of 62 mS in a FET mode are obtained for the same device.

Keywords:

Heterojunction bipolar transistor
Gallium arsenide
Heterojunction
Laser
Heterostructure-emitter bipolar transistor
Field-effect transistor
Semiconductor laser theory
Electronic engineering
Transconductance
Mathematics
Optoelectronics
heterojunction field effect transistor
Optics

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