Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

On the basis of an original, physically based analytical model, I-V characteristic of the resonant tunneling diode structure (RTD) has been studied. Comparing AlAs/GaAs heterostructure RTD and Si-based RTD of same dimensions, it turns out that the performances of GaAs devices are superior. However, similar performances can be achieved in the HfO2/Si RTD, by a strong reduction in barrier tunnel thickness and width well. In conclusion, an extreme shrinking of Hf02/Si structure dimensions can offer, in principle, RTD performances comparable to conventional AlAs/GaAs heterostructures. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)