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Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node
Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node
2011
Chang
Guillorn
Solomon
Lin
Engelmann
Pyzyna
Ott
Haensch
Keywords:
Physics
fin width
Logic gate
Quantum capacitance
Scaling
Optoelectronics
Silicon on insulator
Silicon
Node (circuits)
Correction
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